Change Location English RON. The Qorvo RFSA3523 offers 5-bits of attenuation with 0. 11ac applications, the TQP5523 and. Qorvo SICFET N-CH 750V 120A TOLL Min Qty: 1 Container: Digi-Reel: 70 Digi-Reel® 1 $88. Skip to Main Content +48 71 749 74 00. Victoria British Columbia. Offering 0. announces design and sales support for TriQuint Semiconductor’s TQP4M0010, SPDT switch featuring up to 50dB of isolation from an internally terminated, absorptive design. 4: Package Type: MO-229: Country Of Origin: CN: ECCNCode:The UJ4SC075005L8S is a 750V, 5. RFMW announces design and sales support for a low noise amplifier from Qorvo. see the UJ4SC075005L8S page or Qorvo’s power solutions page. 4 mohm, MO-299. Contact Mouser (Italy) +39 02 57506571 | Feedback. The QPA1003P operates from 1 to 8 GHz and typically provides 10W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. 8dB in-band insertion loss. 153kW (Tc) Surface Mount TOLL from Qorvo. RFMW, Ltd. 4mΩ G4 SiC FET. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 11ax front end module (FEM). Qorvo-UnitedSiC. Please confirm your currency selection: Australian Dollars Incoterms:DDPThe UJ4SC075005L8S is the first product in a family of 750V SiC FETs released in the TOLL package with on-resistance ranging from 5. 153kW (Tc) Surface Mount TOLL from Qorvo. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. The Qorvo QPA3358 provides 34 dB of flat gain and low noise of 4 dB for DOCSIS 3. Designed to support applications in EW, Radar, commercial and military communication systems, and test equipment, the QPA2213 has. Add to Quote. 4GHz WLAN, Bluetooth and Wi-FI products must coexist with 4G LTE and TD-LTE signals. Skip to the end of the images gallery. Offering 10 Watts of linear power for wideband communications systems with < -25 dBc IMD3, the QPA2212T operates from 27. This online developer documentation is continuously updated in response to our. The TGS2354-SM from TriQuint is packaged as a 4x4mm QFN while the TGS2354 offers similar performance in DIE for hybrid applications. 5 dB of gain. Designed for next-generation AESA radar applications, the Qorvo QPM1002 incorporates a T/R switch, low noise amplifier and power amplifier in a 5x5mm QFN package for tight spacing requirements. RFMW, Ltd. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. The TGA2216 provides 22dB of small signal gain and 14dB of large signal. 4GHz to 4GHz, this high linearity, ultra low noise figure LNA offers a 0. Dual 6-bit digital step attenuators are programmed with a 12-bit Serial Peripheral Interface (SPI) offering 63 dBRFMW, Ltd. Qorvo SICFET N-CH 750V 120A TOLL Min Qty: 1 Container: Digi-Reel: 70 Digi-Reel. Power gain for the Qorvo TGA2814-CP is rated at 23dB. 2 dB noise figure. The award recognizes RFMW’s strong design, execution, and sales efforts during Qorvo’s 2020 fiscal year. Power added efficiency is >42% and large signal gain is 27. Čeština. Insertion. announces design and sales support for a pair of 75 ohm Amplifiers. Then do not require DC bias and have insertion loss <0. Fabricated on TriQuint’s 0. Annual General Meeting. Designed to provide a low noise, high gain option, it uses an 8V power supply to provide lower overall power dissipation. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si. The QPB8808 provides 20. It is well suited for transmit path gain stages in 5G m-MIMOUJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 5GHz range. Skip to Main Content +65 6788-9233. The Qorvo QPQ1290 has excellent WiFi rejection of 39dB at WiFI channel 11, yet only 3. P1dB is 31dBm. PAE is >15%. 25 In stock. Qorvo’s QPD0305 contains two, 20 Watt transistors for 3. Serving X-band radar and EW applications from 10 to 12 GHz, the Qorvo QPM1021 amplifier offers 100 Watts of saturated output power with large signal gain of 20 dB. 6dB noise figure. UJ4SC075005L8S. Operating from 100MHz to 4. Incorporating an LNA with bypass, transmit PA and SPDT switch, the QPF8538 offers solutions for access. announces design and sales support for a broadband, high-isolation switch from Qorvo. RFMW, Ltd. With a usable bandwidth of 39. The TriQuint TGA2578 offers 27dB small signal gain while maintaining 40% power added efficiency (PAE). 4mΩ G4 SiC FET. announces design and sales support for the TQP9107 from Qorvo, the new company name for the merger of TriQuint and RFMD. announces design and sales support for a 3-stage, high gain amplifier designed for ease-of-use in point to point radio systems. 5 dB for DOCSIS 3. 5 baths property. Designed for use from 50MHz up to 2600MHz, the TAT7460B1A addresses CATV and Satellite bands in a single part. 2312-UJ4SC075008L8SCT. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The QPA0004 power amplifier enables next generation radar systems with reconfigurable RF output delivering 9 Watts of Psat RF power in S-band (3. The QPD2025D is designed using Qorvo’s proven standard 0. element14 India offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support. TriQuint’s 885062 and 885071 coexistence filters offer high rejection in adjacent LTE bands yet come in an industry-leading small package measuring. Processed using Silicon on Insulator (SOI), the switch is designed for use in CATV, satellite set top, and other high-performance communications systems requiring high isolation. Skip to Main Content +65 6788-9233. UJ4SC075005L8S UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL katalogový list, zásoby a ceny. A 10-lead, bold-down flange package with CuW-base provides superior thermal. 5 to 31 GHz with 22 dB small signal gain. RFMW, Ltd. 4 mohm, MO-299. Ft HUF € EUR $ USD Hungary. 1dB. 4 GHz low noise amplifier (LNA),. RFMW announces design and sales support for a dual-channel, low noise amplifier from Qorvo. The RF input is prematched forRFMW announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Push Pull amplifier. The Qorvo QPA9424, with on-chip bias control and temperature control circuits, is suitable for small cell base station applications over the 2300 – 2400 MHz frequency range (band 30 and band 40). Incoterms:DDP All prices include duty and customs fees on select shipping methods. 5 dB of gain while drawing only 90 mA from UJ4SC075005L8S DISTI # 2312-UJ4SC075005L8SDKR-ND. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. The QPA9908RFMW, Ltd. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. announces design and sales support for a DOCSIS 3. 7mm. Makipag-ugnayan sa Mouser +632. announces design and sales support for Qorvo’s TGA2595-CP, a 27. announces design and sales support for a Digital Step Attenuator (DSA). Pricing and Availability on millions of electronic components from Digi-Key Electronics. 17 GHz frequency range with up to 27 dBm of linear power and 30 dB of gain. Operating from DC to 3. The transistor can be tuned for power, gain and efficiency. RFMW, Ltd. RFMW, Ltd. QorvoRFMW, Ltd. Qorvo packages the TGA2625-CP in a UJ4SC075005L8S SiC FET, How2Power Today, April 2023. Linear gain is 12dB. 6 mohm SiC FET 器件基于独特的级联电路配置，其中常开 SiC JFET 与 Si MOSFET 共同封装以产生常关 SiC FET 器件。该器件的标准栅极驱动特性允许使用现成的栅极驱动器，因此在更换 Si IGBT、Si 超级结器件或 SiC MOSFET 时需要最少的重新设计。该器件采用 TO-247-4L 封装，具有超低栅极. announces design and sales support for two BAW filters targeting applications where 2. Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. Kirk Barton is a Technical Marketing Manager for Power Products at RFMW. An alternative to costly, hybrid amplifiers, this device runs from a single, +3V supply drawing 52 mA. announces design and sales support for the TGA2620-SM, TriQuint’s 16-18GHz driver amplifier delivering 19dBm Psat for commercial and military radar and 18dBm P1dB for communication systems. RFMW, Ltd. 4GHz Wi-Fi FEM. Italiano; EUR €. announces design and sales support for a high performance, SiGe, HBT, MMIC amplifier. announces design and sales support for a GaN power amplifier delivering 80W Psat power from 3. Contact Mouser (Italy) +39 02 57506571 | Feedback. announces design and sales support for a pair of 5GHz power amplifiers designed for 802. 5dB in low voltage applications such as GPS and RFID receivers operating in frequency ranges from 100 to 1300MHz. Add to Cart. The Qorvo QPQ1297 supports Band 3 LTE, small cells, mobile routers and repeater designs with uplink pass band frequencies from 1710 to 1785 MHz and downlink pass band frequencies from 1805 to 1880 MHz. Skip to Main Content +60 4 2991302. announces design and sales support for a pair of GaN amplifiers targeted at weather and marine radar applications. 4mΩ G4 SiC FET. Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. 5dB or 37. UJ4SC075005L8S UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Skip to Main Content +852 3756-4700. Driven from a 28V supply drawing 450mA, power added efficiency is >31%. The Qorvo QPQ1905 exhibits low loss in the Wi-Fi band (Channels 1-2) and high, near-in rejection in the 2. announces design and sales support for Qorvo’s RFVC6405 voltage controlled oscillator. 7 to 3. Qty. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when Order today, ships today. Saturated output power from the transmit amplifier is. 4 mohm 750V Gen 4 SiC FET for the RFMW Power Expert Product Pick for May. Change Location English NZD $ NZD $ USD New Zealand. Add to Cart. RFMW announces design and sales support for a high efficiency amplifier from Qorvo. 1 to 5. It simulates parasitic impedances in. 2 dB noise figure. Number of Channels: Single. 1 amplifiers and broadband CATV hybrid modules from 47 to 1218 MHz. Integrated DC blocking caps on The UJ4SC075005L8S is a 750V, 5. UJ4SC075005L8S SiC FET, How2Power Today, April 2023. 4 mohm 750V Gen 4 SiC FET for the RFMW Power Expert Product Pick for May. 11ax) front end module (FEM). Change Location English SGD $ SGD $ USD Singapore. announces design and sales support for the TQP9108 from Qorvo. Potvrďte vybranou měnu:Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. Available in a 0. RFMW, Ltd. RFMW announces design and sales support for a high performance filter from Qorvo. 4 to 60 mohm in the 750V UJ4C/SC series and 23 to 70 mohm in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide power designers with the industry's best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient SiC power solution. 5 Items < Expand Attributes > > Collapse Attributes < Show per page. Incoterms: DDP is available to customers in EU Member States. No RF blocking caps are necessary to. 11ax) front end module (FEM). 5 GHz radar systems, the QPA1027 amplifier from Qorvo provides a small signal gain of 22 dB. Incoterms:DDP All prices include duty and customs fees on select shipping methods. Change Location English HUF. Register to my Infineon and get access to thousands of documents. Report this post Report Report. There is a large space between the drain and other connections but, with. The Qorvo RFMD2080 can generate output frequencies of between 45MHz and 2700MHz, making it suitable for a wide range of applications such as satellite. The race to reduce power losses in semiconductor switches is being led by wide band-gap (WBG) devices and particularly SiC FETs, cascodes of a silicon carbide JFET and co-packaged silicon MOSFET. 5 dB from this internally matched, discrete GaN on SiC HEMT device. SiC MOSFET from Qorvo Download Datasheet Request Quote. Přeskočit na Hlavní obsah +420 517070880. Qorvo 的 UF3SC120009K4S 1200 V、8. 60. Designed for S-band radar applications, the TGA2814-CP is a flanged, surface mount amplifier with a pure copper base providing superior thermal management. The QPA9226 provides 34dB of power gain for femtocells, CPEs and data cards. The QPA9942 power amplifier supports small cells operating in the 3300 to 3800 MHz frequency range with up to 35. The Qorvo TQQ0302 offers similar bandwidth and power handling for Band. 6dB of gain and 57dBmV output at 1218MHz. 3 GHz. Contact Mouser (Singapore) +65 6788-9233 | Feedback. RFMW, Ltd. Gen II GaN technology withstands up to 5W of CW RF incident power while delivering a saturation power of 15 dBm with a lowUJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Ideal for DOCSIS 3. TGC2610-SM conversion gain is 14dB due to integrated buffer. 5GHz devices offering 17dB of gain, nearly twice that of competing GaN devices. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when The UJ4SC075005L8S is a 750V, 5. Drawing 93 mARFMW, Ltd. 8 to 5V. The QPQ1298 is a compact, bulk-acoustic wave (BAW) band pass filter with 2595 MHz center frequency and 160 MHz bandwidth for Sub-Band 41 uplink/downlink applications in TDD macro cells and small cell base stations. RFMW, Ltd. Kirk Barton has selected the Qorvo, Inc. 4dB. 11ax) front end module (FEM). 5dB of gain with 31. Overview. 9 GHz in an air-cavity package. RFMW announces design and sales support for a fully matched GaN IMFET from Qorvo. Power added efficiency (PAE) is >32% for this 28VRFMW announces design and sales support for a high power, GaN amplifier from Qorvo. The UJ4SC075005L8S is the first product in a family of 750V SiC FETs released in the TOLL package with on-resistance ranging from 5. The Qorvo QPL9097 spans 3300 to 4200MHz for 5G massive MIMO base station receiver applications as well as repeaters and tower mounted amplifiers. announces design and sales support for the Qorvo QPA9226, Small Cell Power Amplifier. Order today, ships today. P1dB is rated at >32dBm with a small signal gain of 19dB. RFMW, Ltd. 5dB. The TGC2610-SM provides an industry leading, 1. Contact Mouser (Czech Republic) +420 517070880 | Feedback. Pricing and Availability on millions of electronic components from Digi-Key Electronics. The QPB9324 and QPB9325 combine a high power handling (52W) switch with two low noise amplifiers targeting wireless infrastructure applications configured for TDD-based architectures. Built & Verified by Ultra Librarian. RFMW, Ltd. Infineon Component Library Installation Guide Keysight ADS® Update Infineon Component Library Installation Guide 3 Revision 1. 25W of power, this highly linear (-47dBc ACLR @ 24dBm) amplifier serves 2. The TQP2451 and TQP2453 support 1900MHz and 1800MHz transmitter designs respectively. It provides ultra-low Rds(on) and unmatched performance across. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. The TriQuint TGA2599-SM offers 2W of output power with >23dB of small signal gain. Capable of operation from DC to 2700MHz, the TQQ7399 has aRFMW, Ltd. announces design and sales support for a high frequency, high power MMIC amplifier from Qorvo. 2312-UJ4SC075005L8SCT. 4 mohm, MO-299. Performance is focused on optimizing the PA for a 5 V supply voltage that conserves power consumption while. announces design and sales support for TriQuint Semiconductor’s T1G6003028-FL, DC – 6GHz GaN transistor offering 30W P3dB at 6GHz and up to 40W P3dB midband. The Qorvo RFSW6024 supports WIFi, LTE, 4G and general purpose wireless infrastructure from 5 to 6000MHz. RFMW announces design and sales support for a WiFi 6 (802. Figure 4: On-resistances compared for switches in TOLL packages, 600-750 V class at 25°C and 125°C. Comparing SiC FETs and Si. 10mm chip suitable for eutectic die attach, the TGF2120 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply. 1 compliant CATV amplifiers. Change Location English RON. RFMW announces design and sales support for a low noise, high gain, wide bandwidth MMIC amplifier IC. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. 5 to 6GHz GaN power amplifier provides 40W of saturated output power with power added efficiency (PAE) of 36%. Change Location English EUR € EUR $ USD Greece. 4 MOHM SIC FET Qorvo 750 V, 5. 153kW (Tc) Surface Mount TOLL from Qorvo. The energy efficient Qorvo QPF4288 integrates a 2. announces design and sales support for a low current hybrid amplifier. James Bay Inn Hotel, Suites & Cottage. Director of Global Distribution at Qorvo gave the award to. The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11. Change Location. Qorvo; Done. RFMW, Ltd. 5 Watts of linear power at 25 dBc IMD3 with small signal gain of 25 dB. Offering 0. 4 mOhm UJ4SC075005L8S is 120A up to case temperatures of 144oC, while the pulsed current rating is 588A up to 0. Transistor Polarity: N-Channel. 4GHz power amplifier (PA), regulator, SP3T switch, low noise. With two stages of amplification, the TQP9108 offers 30. 4 mohm, MO-299. The QPA3230 provides up to 22. The TGA2618-SM offers a noise figure of 2. RFMW, Ltd. The environmental stress tests listed below are performed with pre-stress and. 7dB with isolation >20dB. Register to my Infineon and get access to thousands of documents. com Like Comment Share CopyRFMW, Ltd. 4 mohm 750V Gen 4 SiC FET provides ultra-low Rds (on) and unmatched performance across the main figures of merit (FOM) for on-resistance and output capacitance. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. RFMW, Ltd. With 20 dB ofRFMW, Ltd. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support. The QPB7425 operates onRFMW, Ltd. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, imbentaryo at presyo. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design whenUJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. The Qorvo QPL7442 is a single-ended gain block matched to 50 ohms. The RFAM3620 employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature. announces design and sales support for the TGA2618, a 16-18GHz low noise amplifier that draws only 30mA of current from a 3V supply. Skip to Main Content +852 3756-4700. announces design and sales support for the TGA2627-SM. 5 GHz) and 8 Watts in X-band (9 to 11 GHz). These MMIC GaAs VPIN limiters protect sensitive receivers from high power incident signals. The Qorvo TGA2574 serves EW, Radar and Instrumentation markets and provides world-class power /Kirk Barton has selected the Qorvo, Inc. Gain equalizers allow the ability to adjust for power roll of with changes such as temperature, cable length, etc. Change Location English MYR. Power gain of the QPA3069 is 25RFMW announces design and sales support for high-performance, mmWave, 5G front end modules from Qorvo. RFMW announces design and sales support for a variable gain equalizer from Qorvo. 5 dB of gain and a typical noise figure of 4. RFMW announces design and sales support for a Wi-Fi 6 (802. 5 to 3. Using a single. The filter provides >40dB of isolation from adjacent LTE bands. The TriQuint (Qorvo) TGF3020-SM provides 5. RFMW, Ltd. Skip to Main Content +852 3756-4700. Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. The QPB9324 covers frequencies from 3. Skip to Main Content +60 4 2991302. 7 to 2. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design whenOrder today, ships today. It is highly flexible and can be reconfigured via I2C for multiple applications without the need for PCB changes. 4 to 16. Change Location English MYR. SiC FET. With 32dB of typical gain, the RFPA5552 offers high. An example device is the UJ4SC075005L8S from the Qorvo SiC FET range. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support. RFMW, Ltd. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 3 GHz. 0 dB noise figure. 7 dB at maximum frequency. Packaged as a 3×3 plastic QFN, the TGF3020-SM is. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Linear gain is. 6 GHz, 15 Watt / 30 Watt, 48 Volt Asymmetric Doherty QPD0009 Specs. Pricing and Availability on millions of electronic components from Digi-Key Electronics. announces design and sales support for Qorvo’s TQP7M9106, high linearity amplifier. Spanning the frequency range of 2. The Qorvo QPL7433, single ended LNA combines flat gain with broad bandwidth of 50 MHz to 3. RFMW announces design and sales support for a high linearity amplifier from Qorvo. It can also functionRFMW, Ltd. 2,000. announces design and sales support for a temperature compensated voltage controlled attenuator. Set Descending Direction. announces design and sales support for two S-band power amplifiers from TriQuint. TriQuint’s TQP5523 and TQP5525 are fully integrated modules with internal matching on both input and output ports. Based on a collection of useful Microwave Journal articles, the eBook includes a Qorvo white paper covering various technology tradeoffs for designing FWA arrays including beamforming techniques, front-end. announces design and sales support for the Qorvo TGS4310-SM single-pole, double-throw (SPDT) reflective switch. Kirk Barton has selected the Qorvo, Inc. Internally matched to 50 ohms on both input and output ports, this amplifier is easily integrated into designs for wireless. Change Location English USD $ USD € EUR; R ZAR £ GBP South Africa. Skip to Main Content +358 (0) 800119414. announces design and sales support for a 2. 5W of power, this highly linear (-47dBc ACLR @ 27dBm) amplifier serves 2. UJ4SC075005L8S 5. 1 CATV systems. and Qorvo, Inc. 8 GHz massive MIMO microcell and macrocell base stations. The CMD328 covers 6 to 18 GHz with over 27 dB of gain and 1. announces design and sales support for a 17W Psat amplifier supporting Radar applications in the 10-11GHz frequency range. Covering 700 to 960MHz, the Qorvo TQP9107 serves small cell and repeater applications, DAS and. 7GHz with 10 and 18 watts of saturated output power respectively. Skip to Main Content +65 6788-9233. RFMW announces design and sales support for a high efficiency amplifier from Qorvo. announces design and sales support for a high-performance, X-band, T/R module. The Qorvo QPQ1270 supports Band 7 uplink and downlink applications in LTE dongles, small cells, base station infrastructure and repeater designs with uplink pass band frequencies from 2500 to 2570 MHz and downlink pass band frequencies from 2620 to. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. Company. Meeting the strict requirements for LTE, the 857182 SAW duplexer offers high rejection. Rx gain is up to 13. The QPA9901 power amplifier supports small cells operating in the 2.